【摘要】 采用一步电沉积在氧化铟锡（ITO）导电玻璃基底上制备纯相SnO₂纳米晶薄膜材料,通过改变沉积条件,研究沉积电位、镀液温度和HNO₃浓度对薄膜组成结构的影响。结果表明:当沉积电位为-0.9 V（vs.SCE）,镀液温度为65℃,HNO₃浓度为50 mmol/L时,所制备的SnO₂纳米晶薄膜为纯相金红石型结构,且薄膜相对连续致密。光电性能测试表明,该薄膜具有优异的光电性能,在可见光区透光率大于90%,带隙为3.75 e V,且电阻率为2.2×10^-3Ω·cm,载流子浓度为1.9×10²⁰cm^-3,载流子迁移率为14.8 cm²/（V·s）。故所制备的SnO₂纳米晶薄膜是太阳能电池的理想窗口层材料。更多还原

【Abstract】 In this work,pure-phase tin oxide（SnO₂） nanocrystal films were deposited on indium tin oxide（ITO）substrates by a one-step electrodeposition approach followed by annealing treatment. The effects of varying the electrodeposition potential,electrolyte temperature and HNO₃ concentration on the crystal structures of SnO₂ films were investigated by varying the deposition parameters. The results showed that a pure tetragonal rutile SnO₂ film was obtained at the electrodeposition potential of-0. 9 V（vs. SCE）,an electrolyte temperature of 65 ℃,and an HNO₃ concentration of 50 mmol/L. The obtained SnO₂ film possessed relatively continuous and compact surface features,and exhibited good optical and electrical performance with a transmittance higher than 90% in the visible light region,a band gap of 3. 75 e V,as well as an electrical resistivity of 2. 2 × 10^-3Ω·cm,a carrier concentration of1. 9 × 10²⁰cm^-3 and a carrier mobility of 14. 8 cm²/（V·s）. Therefore,the SnO₂ nanocrystal film can be used as a promising window layer material for solar cells.更多还原