该报告围绕大失配异质体系的应力调控和外延生长动力学这一重要科学问题,从基于图形衬底外延成核入手,研究了大失配外延的成核机理,外延掺杂机理,优化了Ga N基蓝光量子阱LED的外延结构生长和设计,提出了新型掺杂技术,进而有效提高了Ga N LED结构材料的内量子效率;此外,围绕Ga N LED结构体系的载流子输运和复合机制,在提高内量子效率的同时,结合APSYS软件模拟,研究大注入条件下的量子效率下降物理机制,进行了新型Ga N LED量子阱结构设计。
【英文摘要】
Project progress smoothly, the expected goal is completed according to the plan. Around the important scientific problems about dynamic adjustment and epitaxial growth in the large mismatch of heterogeneous systems,Researches starting from the Graphical substrate based on epitaxial nucleation technique, studied the mismatch epitaxial nucleation mechanism and epitaxial doping mechanism, optimized the structure design and epitaxial growth of Ga N based blue quantum well LED,put forward a new type of doping te...
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