【摘要】 针对SiC功率金属氧化物半导体场效应晶体管（metal-oxide-semiconductor field-effect transistor,MOSFET）器件进行了抗辐照试验的研究,利用实验室环境模拟空间辐照进行了试验,采用⁶⁰Coγ射线源与测试系统开展了总剂量辐照试验研究,对SiC MOSFET器件的阈值电压与导通电阻的漂移进行了表征,得到辐照后阈值电压的漂移小于0.8 V,导通电阻的变化小于0.02?。同时采用Br、I、Au三种离子作为单粒子辐射源,研究了SiC MOSFET器件的单粒子栅穿（single event gate rupture,SEGR）和单粒子烧毁（single event burnout,SEB）机制。通过试验获得了SiC MOSFET器件抗辐照特性参数,为其在航空、航天等领域中的应用提供了技术参考。更多还原

【Abstract】 The anti-radiation tests have been studied on SiC power metal-oxide-semiconductor field-effect transistor（MOSFET）. To simulate the space radiation environment by using laboratory environment, the ⁶⁰ Co γ ray source and testing systems are introduced to study the total dose of radiation. The drift of threshold voltage and on-state resistance is characterized. After the radiation, the drift of threshold voltage is less than 0.8 V, and the variation of on-state resistance is less than 0.02 ?. Simultaneously, by using three ions including Br, I, and Au as radiation source, the failure mechanisms of the SiC MOSFET in a single event gate rupture（SEGR） and single event burnout（SEB） are studied. The anti-radiation parameters of SiC MOSFET are obtained according to the experiments, which provide a technical reference for its application in the aerospace system in the future.更多还原