It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and ...
【英文摘要】
It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and ...
【基金】
supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092)
【更新日期】
2016-04-14
【分类号】
TN322.8
【正文快照】
1.Introductionrate than at a high dose rate.This work utilizes experimentsThe PNP bipolar junction transistors are utilized in analogand an analytical model to explain the mechanism responsiblefor radiation-induced 1/IC applications such as input stages,a
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