The surface microstructured silicon can be prepared by femtosecond laser pulses irradiation in SF6 in certain conditions. After annealing,Zn O: Al film of 50 nm was covered on microstructured silicon using ALD,Al electrode forming on the back of silicon,so the diode of microstructured silicon was made. The absorption characteristics and I- V characteristics of diode were tested. The research results showed that the microstructured silicon diodes have significantly enhanced light absorption in the wide band ...
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