Enhanced channel hot carrier effect of 0.13 μm silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect
In this paper,a series of hot carriers tests of irradiated 130 nm partially depleted silicon-on-insulator NMOSFETs is carried out in order to explore the HCI influence on the ionizing radiation damage.Some devices are irradiated by up to 3000 Gy before testing the hot carriers,while other devices experience hot carriers test only.All the devices we used in the experiments are fabricated by using a 130 nm partially depleted(PD) SOI technology.The devices each have a 6 nm-thick gate oxide,100 nm-thick silicon...
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