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Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

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【作者】 金秋雪刘波刘燕王维维汪恒许震高丹王青夏洋洋宋志棠封松林

【Author】 Qiu-Xue Jin;Bo Liu;Yan Liu;Wei-Wei Wang;Heng Wang;Zhen Xu;Dan Gao;Qing Wang;Yang-Yang Xia;Zhi-Tang Song;Song-Lin Feng;State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;

【机构】 State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of SciencesUniversity of Chinese Academy of Sciences

【摘要】 An optimized device structure for reducing the RESET current of phase-change random access memory(PCRAM)with blade-type like(BTL) phase change layer is proposed.The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation.The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller,and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface.The results indicate that the BTL cell has the superiorities of increasing the heating efficiency,decreasing the power consumption and reducing the RESET current from 0.67 mA to 0.32 mA.Therefore,the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.

【Abstract】 An optimized device structure for reducing the RESET current of phase-change random access memory(PCRAM)with blade-type like(BTL) phase change layer is proposed.The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation.The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller,and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface.The results indicate that the BTL cell has the superiorities of increasing the heating efficiency,decreasing the power consumption and reducing the RESET current from 0.67 mA to 0.32 mA.Therefore,the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.

【关键词】 RESETheatingbladedecreasingamorphouscrystallinefabricationconcentratedapplyingAmorph
【基金】 Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402;the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003;the National Natural Science Foundation of China under Grant Nos 61261160500,61376006,61401444 and 61504157;the Science and Technology Council of Shanghai under Grant Nos 14DZ2294900,15DZ2270900 and 14ZR1447500
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2016年09期
  • 【分类号】TP333
  • 【被引频次】1
  • 【下载频次】18
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