Oxygen Scavenging Effect of LaLuO₃/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

【摘要】 Higher-κ dielectric LaLuO₃,deposited by molecular beam deposition,with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconductor field effect transistors.Threshold voltage shift and capacitance equivalent thickness shrink are observed,resulting from oxygen scavenging effect in LaLuO₃ with Ti-rich TiN after high temperature annealing.The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.更多还原

【Abstract】 Higher-κ dielectric LaLuO₃,deposited by molecular beam deposition,with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconductor field effect transistors.Threshold voltage shift and capacitance equivalent thickness shrink are observed,resulting from oxygen scavenging effect in LaLuO₃ with Ti-rich TiN after high temperature annealing.The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.更多还原