【摘要】 对以SiCl₄和H₂为源气体、采用等离子体增强化学气相沉积（PECVD）技术在低温快速沉积优质高稳定性的微晶硅薄膜进行了研究.在低于250℃下,成功制备出了沉积速率高达0.28nm/s、晶化度达80%以上的微晶硅薄膜.通过光照实验,表明该微晶硅薄膜光致电导率基本保持恒定;通过对气流分布进行调节,微晶硅薄膜的均匀性得到明显改善,均匀度高达95%.更多还原

【Abstract】 High-quality microcrystalline silicon films with improved stability were prepared by plasma enhanced chemical vapour deposition technique from SiCl₄/H₂ under 250℃,at a higher rate over 0.28nm/s,with a crystalline fraction of 80%.The photoconductivity of the microcrystalline silicon films keeps a constance after 540 min long light soaking.The thickness uniformity of films was markedly improved（more than 95%）by altering the distribution of pore.更多还原