【摘要】 分别采用原子层沉积（ALD）和磁控溅射法（MS）在Si和石英衬底上制备TiO₂薄膜,并进行退火处理。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、原子力显微镜（AFM）和紫外分光光度计对这两种方法制备薄膜的晶型结构、表面形貌和光学特性进行分析对比。结果显示,对于沉积态TiO₂薄膜,ALD-TiO₂和MS-TiO₂未能检测到TiO₂衍射峰。ALD-TiO₂为颗粒膜,其表面粗糙,颗粒尺寸大;MS-TiO₂薄膜表面平整。经退火后,两种方法制备的TiO₂薄膜能检测到锐钛矿A（101）衍射峰,但结晶质量不高。受薄膜表面形貌和晶型结构等因素影响,退火前后ALD-TiO₂透过率与MS-TiO₂透过率变化不一致。对于沉积态和退火态薄膜的禁带宽度,ALD-TiO₂分别为3.8e V和3.7 e V,吸收边带发生红移,MS-TiO₂分别为3.74 e V和3.84 e V,吸收边带发生蓝移。更多还原

【Abstract】 Titanium dioxide thin films were deposited on Si and quartz substrates by atomic layer deposition（ ALD） and magnetron sputtering（ MS）,and also annealed in nitrogen atmosphere. Crystal structure,surface morphology and optical properties of titanium dioxide films were characterized by X-ray diffraction（ XRD）, scanning electron microscopy（ SEM）,atomic force microscopy（ AFM）, and ultraviolet spectrophotometer. The experimental results show that as for deposited TiO₂ film,both ALDTiO₂ and MS-TiO₂ failed to detect TiO₂ diffraction peaks. ALD-TiO₂ is granular film with rough surface and large particles size. MS-TiO₂ is a smooth and continuous films with extremely smooth surface. For annealed TiO₂ films,crystal transition film prepared by this two methods to anatase,however the crystallization is incompletely. Affected by surface morphology and crystal structure and other factors,before and after annealing of ALD-TiO₂ transmittance and MS-TiO₂ transmittance change is not consistent.For deposited and annealed films,the band gap of ALD-TiO₂ were 3. 8 e V and 3. 7 e V,the absorption edge red shift,MS-TiO₂ were 3. 74 e V and 3. 84 e V,with the blue shift of absorption edge.更多还原