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放电等离子烧结镓掺杂氧化锌陶瓷及其电学特性研究
Preparation and Electrical Properties of Ga Doped ZnO Ceramics by Spark Plasma Sintering
【摘要】 采用放电等离子烧结(SPS)方法烧结出了致密的掺镓氧化锌陶瓷(0.075wt%GZO)。样品的烧结温度为950~1200℃,烧结时间为3~21 min,并对样品的物相、断口形貌、电学性能以及密度进行了测试和分析。结果表明,烧结条件对GZO的晶体结构没有影响,但是对样品的密度、晶粒尺寸、电阻率等性质有一定的影响。综合分析上述结果可得到用SPS方法烧结GZO陶瓷的最佳烧结工艺是烧结温度1100℃,烧结时间9 min。
【Abstract】 Bulk gallium-doped zinc oxide ceramics( 0. 075wt% GZO) which has a near full density were fabricated by spark plasma sintering process. The sintering temperature of the specimens from 950 ℃ to1200 ℃ and sintering time from 3 min to 21 min. The phase,fractured morphology,electrical properties and density of samples were investigated. The results indicate that the crystal structure of zinc oxide doesn’t change with the change of sintering conditions,but it impacts on the density,grain growth and resistivity of GZO ceramics. All experiments results reveal that sintering temperature of 1100 ℃ and sintering time of 9 min are the optimal sintering conditions of GZO ceramics.
【Key words】 gallium doped ZnO ceramic; spark plasma sintering; sintering temperature; sintering time;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2016年06期
- 【分类号】TQ174.1
- 【被引频次】1
- 【下载频次】90