【摘要】 在脉冲功率源系统中,隔离硅堆起着模块间隔离与保护的作用。分析隔离硅堆的动态特性有助于在硅堆出现故障时推测其原因。结合实验数据,利用软件仿真分析硅堆上电压与电流的曲线;并探究波形变化原因。结果表明,隔离硅堆内部存在电容效应,且结电容会使与后触发电容相连的二极管上出现较大反压,可能影响硅堆的正常使用。结电容值越大,二极管上电压的过渡过程越长,与后触发电容相连的二极管的反向电压过冲越高;对应的反向电流峰值越高,反向恢复时间越短。更多还原

【Abstract】 In the pulsed power supply system,the isolated silicon stack plays a role of isolation and protection.Analyze the dynamic characteristics of the isolated silicon stack can speculate on the reasons for the failure of the silicon stack. Based on the experimental data,the curves of voltage and current on silicon is simulated and analyzed,and the reason of changes of waveform is also explored. The results show that there is a capacitance effect in the isolated silicon stack,and the junction capacitance will cause a large back pressure on the diode,which may affect the normal use of the silicon stack. The greater the junction capacitance value,the longer the transient process of the voltage on the diode,and the higher the diode reverse voltage overshoot; besides,the higher the reverse current peak value,the shorter the reverse recovery time.更多还原