【摘要】 随着CMOS技术进入纳米工艺,随机栅长变化成为影响集成电路性能和成品率最重要因素之一.文中分析并验证了纳米MOS器件随机栅长变化导致电流增益因子与阈值电压的之间的相关性及失配解析关系式,并以此为基础,结合偏差传递理论实现了22 nm工艺MOSFET电流失配模型.仿真实验结果表明,该模型揭示了短沟道效应导致的器件阈值电压变化改变了载流子有效迁移率,进而影响电流增益因子及器件电流的规律,精确地估计了随机栅长变化导致的电气参数统计变化特性.更多还原

【Abstract】 With the CMOS technology entering nanometer regime, random channel length variation has become one of the most important factors which affect the performance and yield of integrated circuits. This paper analyzes and verifies the correlation and mismatch analytical formula for current gain factor and threshold voltage due to this process variation in nanometer MOS devices. And thus a 22 nm MOSFET current mismatch model is proposed according to the propagation of variation methodology. The experimental results show that, the proposed model reveals that short channel effect leads to threshold voltage shift and changes the effective carrier mobility, thereby affects the current gain factor and device currents. The proposed model accurately captures the statistical properties for random gate induced electrical parameter variations.更多还原