【摘要】 采用射频磁控反应溅射在金刚石/Si衬底上制备不同Sc含量的Sc_xAl_1-xN薄膜,并研究了Sc掺杂对薄膜沉积速率、表面粗糙度、晶体取向及压电性能的影响。结果表明,薄膜沉积速率随Sc靶功率的增加近似呈线性增长;合适的Sc掺杂能降低Sc_xAl_1-xN薄膜的表面粗糙度,提高AlN的C轴择优取向程度,并增强薄膜的压电性能;在0³4%范围内Sc的最优掺杂量为19%,此时薄膜整体质量最高,其表面粗糙度为2.95 nm,AlN（002）取向摇摆曲线半高宽为2.8°,压电常数为11.6 pm/V。更多还原

【Abstract】 Sc_xAl_1-xN films with different Sc concentrations were prepared on diamond/Si substrate by RF reactive magnetron sputtering.The effect of Sc doping on deposition rate,surface roughness,crystal orientation and piezoelectric property of the Sc_xAl_1-xN films was investigated. The results indicate that the deposition rate of the Sc_xAl_1-xN films increases linearly with the increasing power of Sc target.At appropriate Sc concentration,the surface roughness of the films decreases and the degree of C axis preferred orientation of AlN increases,and the piezoelectric property of Sc_xAl_1-xN films enhances. The obtained results show that optimal Sc concentration is 19%between 0 and 34%,the film with Sc concentration of 19% has highest quality,such as the surface roughness is 2. 95 nm,the rocking curve FWHM of（ 002） orientation is 2. 8°,and the piezoelectric coefficient is 11. 6 pm/V.更多还原