【摘要】 随着三维集成阻变存储器(Resistive Random Access Memory,RRAM)集成度的不断提高,由焦耳热引起的热效应将会严重影响器件的稳定性、可靠性及寿命.因此,三维集成RRAM将面临最大的挑战是如何解决器件的热效应问题,而这种热效应现象伴随着器件特征尺寸的下降,热量分布对于RRAM器件的影响(如能耗、热稳定性等)变得尤为突出.特别是随着存储单元密度的不断提升,相邻单元之间的距离不断减小,邻近单元的热串扰将严重制约三维集成RRAM的发展和应用.本文基于电-热类比方法,建立了一种新的三维集成阻变存储器阵列的电-热紧凑模型;模型的准确性通过ANSYS物理场仿真软件进行了验证.该模型能够在Cadence中同时进行阵列电学特性和热学特性的仿真;本文提出的紧凑模型可以用于预测三维集成RRAM阵列中的热分布状况及分析热串扰.更多还原

【Abstract】 Resistive switching memory(RRAM) with three-dimensional(3D) integration is one of the most effective methods to satisfy the requirement of ultra-high density and ultra-large data storage. With the increase of the integration density of3 D RRAM, Joule heating effect and thermal crosstalk of the RRAM device will seriously affect the stability, reliability and life of RRAM device. Therefore, the biggest challenge for 3D RRAM is how to solve the problem of the thermal effect.Otherwise, the thermal effect will be particularly prominent as the feature size of RRAM device is ceaselessly decreased.Especially with the improving of the storage cell densities and hence the decreasing of the distance between adjacent cells, the thermal crosstalk from the adjacent cells will seriously restrict the development and application of 3D integrated RRAM. In this work, we present a new electro-thermal compact model for 3D RRAM arrays. The proposed model is based on the electro-thermal analogy which can couple thermal network to its electrical schematic. The comparison between the compact model simulation results and numerical simulation shows a good accuracy. This proposed model can be used to predict temperature distribution and analyze thermal crosstalk in 3D RRAM arrays. Our work will provide a reliable technical support for the late circuit design and practical application, and lay the foundation for the realization of the high-density 3D integration RRAM.更多还原