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InAs/GaSb Ⅱ类超晶格红外探测技术研究进展

Research progress of InAs / GaSb type Ⅱ superlattice infrared detection technique

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【作者】 刘武陈建新

【Author】 LIU Wu;CHEN Jian-xin;Beijing Institute of System Engineering;Shanghai Institute of Technical Physics,CAS;

【机构】 北京系统工程研究所中科院上海技术物理研究所

【摘要】 InAs/GaSb II类超晶格是一项新型的红外焦平面技术,其响应波长可以覆盖3~30μm的光谱范围,具有均匀性好、暗电流低和量子效率较高等优点,是最有希望的碲镉汞的替代技术。1987年,人们发现了其在红外探测领域的应用价值后,II类超晶格材料和器件的研究获得了极大的关注,特别是近年来II类超晶格探测器的发展在国际上极为迅速,美欧等一些技术先进的国家已经获得了大规模、高性能的超晶格焦平面探测器并实现了清晰的实验室红外热成像。本文简要介绍该项新型红外探测技术的基本原理、技术特点、技术关键及其在国内外的发展趋势。

【Abstract】 InAs / GaSb type II superlattice is a novel infrared focal plane technology,and its response wavelength range can reach 3 ~ 30 μm. It has the advantages of good uniformity,low dark current and higher quantum efficiency,etc.Type II superlattice technique has made rapid progress in recent years,and some abroad countries that have advanced technology have obtained large-scale,high performance superlattice focal plane detector and have achieved clear infrared images in the laboratory. The basic principle and structure features of superlattice infrared detection technique are introduced,and compare with the other infrared detection techniques. The research status of superlattice infrared detection technique is introduced. At last,the development tendency is predicted.

  • 【文献出处】 激光与红外 ,Laser & Infrared , 编辑部邮箱 ,2016年06期
  • 【分类号】TN215
  • 【被引频次】7
  • 【下载频次】516
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