【摘要】 通过在有机发光二极管(OLED)的阳极与空穴传输层NPB之间加入m-MTDATA作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(dnm)/NPB(40-dnm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)、ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)结构的器件,研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现,当缓冲层的厚度为15nm时,器件的启亮电压从未加缓冲层的13V降到了9V,最大发光亮度从未加缓冲层的5900cd/m2增加到16300cd/m2,是原来的2.76倍。最高的电流效率也由未加缓冲层的1.8cd/A变为3.5cd/A,是原来的1.94倍。然后在器件的氧化铟锡(ITO)与NPB之间插入了厚度为15nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比,插入MoO3缓冲层器件的启亮电压降低为8V,最大亮度为13320cd/m2,最大电流密度为6030.74A/m2,最大的电流效率为3.06cd/A。更多还原

【Abstract】 This research investigates the effect of buffer layer on the performance of organic light emitting diodes(OLED)by adding m-MTDATA as buffer layer between anode and hole transport layer NPB.The devices with ITO/m-MTDATA(dnm)/NPB(40-dnm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)and ITO/ MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)structures are prepared.The effects of m-MTDATA thickness on OLED brightness,current density,current efficiency and other properties are studied.It is found that the turn-on voltage of the device reduces from 13 Vto 9V when the thickness of the buffer layer is 15 nm,and the maximum brightness of the device increases from 5900cd/m2 to 16300cd/m2,which is about 2.76 times as much as that of the device without buffer layer.The highest current efficiency also increases from 1.8cd/A to 3.5cd/A,which is1.94 times as much as the device without buffer layer.Then the MoO3 buffer layer with the thickness of 15 nm is inserted in the device as a buffer layer between indium tin oxide(ITO)and NPB.Compared to m-MTDATA device with the same thickness,the turn-on voltage of the device with MoO3 buffer layer declines to 8V,the maximum brightness is 13320cd/m2,the maximum current density is 6030.74A/m2,and the maximum current efficiency is3.06cd/A.更多还原