【摘要】 采用离子束溅射法通过在CH4和Ar的混合气体中溅射Ge靶材制备碳化锗(Ge_1-xC_x)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8GPa.由于薄膜中的Ge-C键代替了C-C键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.更多还原

【Abstract】 Germanium carbon(Ge_1-xC_x) thin films were deposited by ion beam sputtering deposition of Ge target in a CH₄/ Ar discharge. The surface morphology,chemical structure,infrared optical and mechanical properties of the Ge_1-xC_x films were investigated by atomic force microscopy（ AFM）,Raman spectroscopy,X-ray photoelectron spectroscopy（ XPS）,Fourier transform infrared（ FTIR） spectroscopy and nano-indentation,respectively. The relationship between ion beam voltage and film properties was discussed. The results showthat the surface roughness decreases with increasing of the ion beam voltage. The film deposited at a higher voltage has lower carbon content and higher fraction of Ge-C bonds. The film has excellent infrared optical and mechanical properties. The films showgood transparent over a wide range. Due to the content of the carbon decreasing with increasing of voltage,the refractive index increases obviously as the ion beam voltage increases from 300 V to 800 V. The hardness of the film is above 8 GPa. With the Ge-C bonds instead of the C-C bonds and C-Hnbonds,the hardness of the film increases with increasing ion beam voltage.更多还原