【摘要】 直拉硅单晶抛光片经过高温氧化后,腐蚀显示出氧化诱生缺陷,包括漩涡缺陷和氧化层错(oxidation induced stacking faults,OISF),其形状和分布与单晶生长过程中形成的微缺陷有一定的对应关系。文章通过试验显示出漩涡缺陷的内部特征及OISF的密度变化,推测出其对器件性能产生的影响,并确定控制单晶质量的特征参数。更多还原

【Abstract】 After high temperature oxidation and etching,Czochralski(CZ)silicon single crystal polished wafers show oxidation induced defects including swirl defects and oxidation induced stacking faults(OISF),whose shape and distribution correlate with microdefects during the single crystal growth process.The internal characteristics of swirl defects and the density distribution of OISF are experimentally demonstrated and the effect of the defects on the device performance is analyzed.The characteristic parameters of single crystal quality are also determined.更多还原