【摘要】 为了提高黑磷晶体管的迁移率,并适合规模化制备,采用高K值HfO₂与Al₂O₃材料,晶体管沟道使用15nm厚度的黑磷薄膜,制备了黑磷背栅晶体管。测试其直流特性,栅极电压范围-10¹0V,漏极电压范围-3⁰V。常温下晶体管空穴迁移率达到210cm²/（V·s）,电子迁移率为37cm²/（V·s）,开关比4.5×10²。并根据黑磷的带隙特性以及双极性特点,对其漏极电流与栅压、漏压曲线进行理论分析。结果表明,高K值材料对黑磷晶体管性能有明显提升,将进一步促进黑磷晶体管的实用化。更多还原

【Abstract】 In order to improve the mobility of black phosphorus FET and the availability of mass fabrication,a black phosphorus back gate FET with 15 nm black phosphorus channel layer was fabricated by using high K material HfO₂ and Al₂O₃.DC characteristics of the FET was tested with the gate voltage varying from-10 to 10Vand drain voltage from-3to 0V.The FET exhibits a room temperature hole mobility of 210cm²/（V·s）,an electron mobility of 37cm²/（V·s）,and an on/off ratio of 4.5×102.According to the bandgap characteristics and bipolar characteristics of the black phosphorus,theoretical analysis was performed on the relationship between the drain current and the gate and drain voltage.The experiment results show that high K material can remarkably improve the performance of the black phosphorus FET,and further promote its practical application.更多还原