【摘要】 根据微片激光器工作温度、增益介质发射谱和谐振波长三者的关系,研究了双频Nd:YVO4微腔激光器的功率均衡机制。在实验中,通过温控调节双频激光波长和发射谱的相对漂移,实现了双频激光的相对功率可调。实验结果表明,当激光器温度在2.5~22.5℃范围增加时,双频激光的右峰/左峰相对功率比从6.471变化到0.028;当温控在9.1℃时,双频激光的相对功率比约为1.00∶1.00,实现了功率均衡;当温控在7.5℃时,双频激光的相对功率比为1.89∶1.00,此时双频激光的功率乘积最大,可实现最高拍频效率。更多还原

【Abstract】 According to the relationship among the stimulated emission spectrum of the laser gain medium,the dual-mode resonant wavelengths and the operating temperature of the microchip laser,the output power equalization mechanism of dual-frequency modes in a Nd-doped yttrium vanadate(Nd:YVO4)microchip laser is experimentally investigated.In experiments,by controlling the operating temperature of laser gain medium and the wavelength shifting between the resonant wavelengths and the stimulated emission spectrum,the dual-frequency laser with adjustable relative output power is provided.The experimental results also show that peak power ratio of dual-frequency modes(right component vs.left component)is decreased from 6.471 to 0.028 when the operating temperature of the microchip lasers increased from 2.5℃to 22.5℃.When the operating temperature of the microchip laser is set at 9.1℃,the peak power ratio of dual-frequency modes is maintained at nearly 1.00∶1.00,which is named as dual-mode power equalization.When the operating temperature of the microchip laser is set at 7.5℃,the peak power ratio reaches nearly 1.89∶1.00.In such a condition,the peak power product of dual-fre-quency modes reaches the maximum,which can be used for beat-noting with the highest efficiency.更多还原