【摘要】 介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积（ALD）方法实现Al₂O₃栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长（Lg）为2μm,栅宽（Wg）为0.9 mm（0.45 mm×2）,栅极和源极（Lgs）之间的距离为5μm,栅极和漏极（Lgd）之间的距离为10μm。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为-20⁺12V。在栅压V_gs=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm（Wg=0.9 mm）,特征导通电阻为4 mΩ·cm2。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×108。当V_ds=7 V时,器件的峰值跨导为42 mS/mm(Wg=0.9 mm,V_gs=+10 V)。在V_gs=0 V时,栅漏间距为10μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。更多还原

【Abstract】 This essay has reported normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor（ MOS-gate HEMT） fabricated by the inductively coupled plasma（ ICP） recessed technique. A 40-nm Al₂O₃ film was deposited by the atomic layer deposition（ ALD） as the gate dielectric. The normally-off recessed MOSgate AlGaN/GaN HEMT with a gate length of 2 μm and a gate width of 0. 9 mm exhibits a high threshold voltage of+ 4. 6 V,a specific on-resistance of 4 mΩ·cm² and a drain current density of 108 mA / mm（ at a positive gate bias of 10 V）. When the gate bias( V_gs) is 0 V,the breakdown voltage（ BV） of 450 V has been achieved at a drain leakage current of 0. 025 mA / mm for the recessed MOS-gate HEMT with a gate-drain distance of 10 μm. The on / off drain-current ratio( I_on/ I_off) is 5 × 108 for the recessed MOS-gate HEMT. Under a negative gate bias of- 20 V,the gate leakage current of the recessed MOS-gate HEMT was 0. 65 nA.更多还原