【摘要】 建立了场板结终端对金刚石肖特基势垒二极管(SBD)的数值模拟模型,采用Silvaco软件中的器件仿真工具ATLAS模拟了场板长度L、绝缘层厚度TOX、衬底掺杂浓度NB、场板结构形状对器件内部电场分布以及击穿电压的影响,并对结果进行了物理分析和解释。结果表明:当TOX=0.4μm、NB=1015cm-3、L在0~0.2μm范围内时,击穿电压随着L的增加而增加;L>0.2μm后,击穿电压开始下降。当L=0.2μm、NB=1015cm-3、TOX在0.1~0.4μm范围内时,击穿电压随着TOX的增加而增加;TOX>0.4μm后,击穿电压开始下降。当L=0.2μm、TOX=0.4μm、NB=1015cm-3时,器件的击穿电压达到最大的1 873 k V。与普通场板结构相比,采用台阶场板可以更加有效地提高器件的击穿电压。更多还原

【Abstract】 Numerical simulation model of field plate termination diamond Schottky barrier diode( SBD) was established in this paper,the influence of the field plate length L,insulating layer thickness TOX,substrate doping concentration NB,and the structure shape of the field plate on the electric field distribution inside the device and the influence of breakdown voltage of diamond SBD were numerical simulated by Silvaco device simulation tools ATLAS. The results of numerical simulation were analyzed and explained physically. The breakdown voltage increases with the increasing length of the field plate within the range of 0. 0 to 0. 2 μm when TOX= 0. 4 μm and NB= 1015cm- 3,and decreases when L > 0. 2 μm. The breakdown voltage increases with the increasing of insulating layer thickness TOXwithin the range of 0. 1 to 0. 4 μm when L = 0. 2 μm and NB= 1015cm- 3,and decreases when TOX> 0. 4 μm. The breakdown voltage of the device reaches its maximum 1 873 k V when L = 0. 2 μm,TOX= 0. 4 μm,and NB= 1015cm- 3. The steps field plate can effectively improvethe breakdown voltage of the device,compared with the ordinary field plate structure.更多还原