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SiO2膜背封片边缘剥离工艺进展
Technology Development of Stripping Edge of Silica Film on Back-seal Silicon Wafer
【摘要】 背封工艺是外延衬底材料制备的关键工艺之一,由于硅片背面边缘沉积的Si O2膜,在外延工艺中造成外延片边缘多晶颗粒沉积及应力集中,因此越来越多的外延厂家要求对背封片Si O2膜进行边缘剥离,主要介绍了几种边缘剥离的方法,并对其各自的特点进行了分析。
【Abstract】 Back-seal technology is one of the key technologies preparing epitaxial substrate material. Silica film on the edge of wafer will cause the deposition of polysilicon particles and the concentration of stress in the epitaxial process. So the epitaxial manufactures require striping edge of silica film deposited on the back of wafer. Mainly introduce several methods of stripping edge, and analyze their characteristics.
- 【文献出处】 电子工艺技术 ,Electronics Process Technology , 编辑部邮箱 ,2016年04期
- 【分类号】TN405
- 【被引频次】2
- 【下载频次】129