【摘要】 根据高功率、低插损、高隔离的要求,选择串并联电路形式对这些指标做折衷处理。采用多芯片模块组装工艺,把PIN管芯片通过焊料烧结在氮化铝基板上。相比于传统基板材料,氮化铝陶瓷基板导热性能优良,无需加装散热器,使电路尺寸减小,制作简单。实现在L波段上,通过峰值功率500 W、占空比30%的脉冲信号,插入损耗小于0.8 d B,隔离度大于35 d B。更多还原

【Abstract】 Due to the strict requirements of high power, low insertion loss and high isolation, the paper makes a compromise of these parameters by selecting series/parallel circuits. Based on multi-chip module assembly technologies,the PIN diode chip is bonded on Al N ceramic substrate by highly conductive adhesive. Comparingwith conventional substrate materials, Al N has good thermal conductivity whicheliminatesthe heat sinkand reduces circuit size. The Al N-based L-band power switch is capable of endure the pulse signal with 500 W peak power and 30% duty ratio and achieves 0.8 d B or less insertion loss and 35 d B or higher isolation.更多还原