【摘要】 对肖特基区宽度不同的4H-碳化硅(SiC)结势垒肖特基(JBS)二极管进行了仿真与实验研究。根据研究结果设计了一款兼具高功率处理能力与超低漏电流的4H-SiC JBS二极管并进行实验验证。实验结果显示所设计器件通态电阻为36 mΩ,反向耐压650 V时漏电流小于10 nA,功率处理能力大于30 kVA。更多还原

【Abstract】 The article carries out the simulation and experimental research on 4H-silicon-carbide(SiC) junction barrier Schottky(JBS) diode for different width of schottky area.According to the research results,a 4H-SiC JBS diode with both high power handling capacity and low leakage current is designed and verified by experiments.The experimental results show that the on-state resistance of the device,which is designed by the article,is only 36 mfl.The leakage current is less than 10 nA withstand the reverse voltage of 650 V.The power handling capacity is greater than 30 kVA.更多还原