节点文献
氮化物外延生长在线监测技术
In-Situ Monitoring Technology for Growth of Ⅲ Nitrides by Metal Organic Chemical Vapor Deposition
【摘要】 金属有机化学气相沉积外延技术(MOCVD)是利用金属有机化合物进行金属输运的一种气相外延生长技术,是大规模生产第三代半导体光电子、微电子器件的重要方法,也是制备半导体异质结、超晶格、量子阱等低维结构的主要手段。第三代半导体材料的飞速发展对MOCVD设备提出了更高的要求,MOCVD在线监测技术作为控制生长过程的前提,面临更多的挑战。该文综合介绍和比较了当今各种MOCVD在线监测技术的发展情况,并对MOCVD在线监测技术中的关键技术——红外测温、生产信息、曲率测量、光致发光做出简要介绍和看法。
【Abstract】 Metal organic chemical vapor deposition(MOCVD) is a vapor-phase epitaxial growth technology that transports metal by using metal organic compound. It is the most important method for large-scale manufacturing the third generation of semiconductor such as photonics and microelectronics devices. It is also the main method for preparing low-dimensional structures like semiconductor heterojunction, superlattices and quantum wells. The in-situ monitoring is a key for successful material deposition, which brings challenges to the equipment manufacture. This paper gives brief introduction and comparison of the newest in-situ monitoring technologies in recent years, and describes the key technologies like temperature monitoring, growth rate monitoring, curvature measurement and photoluminescence(PL).
【Key words】 curvature measurement; growth information; infrared temperature measurement; in-situ monitoring technology for MOCVD; PL;
- 【文献出处】 电子科技大学学报 ,Journal of University of Electronic Science and Technology of China , 编辑部邮箱 ,2016年04期
- 【分类号】TN304.055
- 【被引频次】3
- 【下载频次】161