【摘要】 微波介质陶瓷谐振器在无线通信基站中有广泛的应用,其品质因数(Q值)主要由材料的介质损耗和金属膜的电导损耗所决定的,传统丝印烧结的金属化膜损耗较大,已成为限制谐振器Q值的主要因素。本文采用直流磁控溅射对相对介电常数为45的微波介质陶瓷进行金属化处理,研究了不同的清洗工艺和复合膜系对介质谐振器性能的影响。实验结果表明,1表面精细打磨和等离子清洗工艺有利于提高膜层结合力,其中Cr/Cu/Ag复合膜系性能最佳,溅射金属化膜层结合力可达6.4MPa,优于丝印工艺的1.8MPa;250~100nm厚度的过渡层金属Cr对Q值几乎无影响,因此可用Cr层提高结合力,且不会牺牲器件Q值;3溅射后器件的Q值最大可达到2673,明显优于丝印烧结工艺的2268。更多还原

【Abstract】 Microwave dielectric ceramic resonators are widely used in wireless base station owing to their compact size and relative high quality factor(Q value),which is mainly decided by the dielectric loss of ceramic and conductor loss of metal film.Traditionally,metallization is realized by silk-screen processes,leading to large conductor loss and poor Q value.We proposed a metallization method for dielectric ceramics withεr=45using direct-current magnetron sputtering technology,and investigated the effects of different cleaning processes and different metallization films on performance of dielectric resonators.Results show that1 finegrind and plasma cleaning process can improve coating adhesion,and Cr/Cu/Ag metallization system shows the best performance with adhesion of 6.4MPa better than 1.8MPa of silk-screen process;2transition metal(Cr)has little effect on reduction of Q value,so that Cr film can be used to improve adhesion without sacrifice of Q value;3The Q value of devices using magnetron sputtering could reach to 2673,superior obviously to silkscreen process with Q value of 2268.更多还原