【摘要】 利用反应磁控溅射法（RMS）制备了SnO₂薄膜,并研究了溅射参数对薄膜微观结构和光学性能的影响。结果表明,随着溅射气压、氧分压的增大和衬底温度的升高,薄膜沉积速率相应减小;在不同衬底温度下（室温至600℃）溅射薄膜时,较高的衬底温度可得到较大的SnO₂晶粒,表面更为粗糙;此外,将原生SnO₂薄膜在O₂气氛下退火可以改善其结晶度,原本的柱状结构转变成致密的薄膜结构,其光学禁带宽度变宽至3.85eV;经过退火的SnO₂薄膜的光致发光（PL）强度显著增强,位于约610nm的PL发光峰主要是源于SnO₂纳米晶体表面悬挂键的未饱和电子态。更多还原

【Abstract】 The present paper deals with the effects of reactive DC magnetron sputtering parameters on the deposition rate of SnO₂ films and their microstructural and optical properties.It was found that the increase of the sputtering pressure,O₂ partial pressure and substrate temperature depress the deposition rate of SnO₂ thin films.SnO₂ films were deposited at different temperatures（from room temperature to 600 ℃）and those deposited at higher substrate temperature have larger crystals and rough surfaces.Moreover,the annealing process in O₂ improves the crystallinity and enlarges the optical band gap of SnO₂ crystals to 3.85 eV,and changes the columnar structure into condensed film with nanocrystals on top.As a result,the photoluminescence（PL）intensity of the SnO₂ film is greatly enhanced,with a PL line peaked at⁶10nm mainly induced by the unoccupied electron states of the dangling bonds on surface of SnO₂ nanocrystals.更多还原