节点文献
时间-电位法跟踪磷化过程及温度对磷化成膜的影响
Tracking of Phosphating Process and Analyzing of Effect of Temperature on Phosphating Finn Studied by Time-Potential Method
【摘要】 目前对磷化成膜机理及规律的认识受限于测试手段等因素,影响了工艺开发和理论探讨。在工业铁皮表面磷化成膜,采用电化学方法,通过开路电位-时间曲线,原位跟踪了磷化成膜过程,用X射线衍射仪(XRD)对磷化过程不同阶段的磷化膜成分进行了测试、分析;通过动电位极化曲线、硫酸铜点滴试验和扫描电镜(SEM)等研究了温度对磷化成膜的影响;讨论了磷化成膜的电化学机理。研究表明:开路电位-时间曲线中的反应斜率、成膜时间等是研究磷化成膜过程的重要特征参数;温度对低常温磷化成膜过程和膜层的耐蚀性能有显著影响,推荐铁基体低常温磷化以35~45℃为佳。
【Abstract】 The phosphating coating was prepared on the surface of ingot sheet.The phosphating coating-forming process was in-situ tracked by the open circuit potential-time curve of electrochemical measurement,and the chemical compositions of phosphating coating during different phosphating processes were tested and analyzed by X- ray diffraction(XRD).Besides,the effects of temperature on the properties of coating were studied by potentiodynamic polarization curves,copper sulfate spot test and scanning electron microscopy(SEM),and then the electrochemical mechanism of phosphating coating- formation was discussed.Results showed that the reaction slope of the open circuit potential-time curve and the coating formation time were important characteristic parameters in the process of phosphating coating- formation.The temperature had significant influences on the phosphating coating-formation process at low ambient temperature,and the optimal temperature for phosphating coating-formation on iron substrate was 35-45℃.
【Key words】 phosphating at low ambient temperature; process tracking; temperature and characteristic parameter; corrosion resistance; mechanism; ingot sheet;
- 【文献出处】 材料保护 ,Materials Protection , 编辑部邮箱 ,2016年12期
- 【分类号】TG174.4
- 【被引频次】4
- 【下载频次】99