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Electronic structure and optical properties of F-doped β-Ga2O3 from first principles calculations

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【作者】 闫金良; 曲崇;

【Author】 Yan Jinliang;Qu Chong;School of Physics and Optoelectronic Engineering, Ludong University;

【机构】 School of Physics and Optoelectronic Engineering, Ludong University;

【摘要】 The effects of F-doping concentration on geometric structure, electronic structure and optical property of β-Ga2O3 were investigated. All F-doped β-Ga2O3 with different concentrations are easy to be formed under Ga-rich conditions, the stability and lattice parameters increase with the F-doping concentration. F-doped β-Ga2O3 materials display characteristics of the n-type semiconductor, occupied states contributed from Ga 4s, Ga 4p and O 2p states in the conduction band increase with an increase in F-doping concentration. The increase of F concentration leads to the narrowing of the band gap and the broadening of the occupied states. F-doped β-Ga2O3 exhibits the sharp band edge absorption and a broad absorption band. Absorption edges are blue-shifted, and the intensity of broad band absorption has been enhanced with respect to the fluorine content. The broad band absorption is ascribed to the intra-band transitions from occupied states to empty states in the conduction band.

【Abstract】 The effects of F-doping concentration on geometric structure, electronic structure and optical property of β-Ga2O3 were investigated. All F-doped β-Ga2O3 with different concentrations are easy to be formed under Ga-rich conditions, the stability and lattice parameters increase with the F-doping concentration. F-doped β-Ga2O3 materials display characteristics of the n-type semiconductor, occupied states contributed from Ga 4s, Ga 4p and O 2p states in the conduction band increase with an increase in F-doping concentration. The increase of F concentration leads to the narrowing of the band gap and the broadening of the occupied states. F-doped β-Ga2O3 exhibits the sharp band edge absorption and a broad absorption band. Absorption edges are blue-shifted, and the intensity of broad band absorption has been enhanced with respect to the fluorine content. The broad band absorption is ascribed to the intra-band transitions from occupied states to empty states in the conduction band.

【基金】 Project supported by the Innovation Project of Shandong Graduate Education,China(No.SDYY13093);the National Natural Science Foundation of China(No.10974077)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2016年04期
  • 【分类号】O614.371;O641.1
  • 【被引频次】7
  • 【下载频次】70
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