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A reference voltage in capacitor–resister hybrid SAR ADC for front-end readout system of CZT detector

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【作者】 刘伟魏廷存李博杨利锋胡永才

【Author】 Liu Wei;Wei Tingcun;Li Bo;Yang Lifeng;Hu Yongcai;School of Computer Science and Technology, Northwestern Polytechnical University;Institute Pluridisciplinaire Hubert CURIEN;

【机构】 School of Computer Science and Technology Northwestern Polytechnical UniversityInstitute Pluridisciplinaire Hubert CURIEN

【摘要】 An on-chip reference voltage has been designed in capacitor–resister hybrid SAR ADC for CZT detector with the TSMC 0.35μm 2P4M CMOS process.The voltage reference has a dynamic load since using variable capacitors and resistances,which need a large driving ability to deal with the current related to the time and sampling rate.Most of the previous articles about the reference for ADC present only the bandgap part for a low temperature coefficient and high PSRR.However,it is not enough and overall,it needs to consider the output driving ability.The proposed voltage reference is realized by the band-gap reference,voltage generator and output buffer.Apart from a low temperature coefficient and high PSRR,it has the features of a large driving ability and low power consumption.What is more,for CZT detectors application in space,a radiation-hardened design has been considered.The measurement results show that the output reference voltage of the buffer is 4.096 V.When the temperature varied from 0 to 80℃,the temperature coefficient is 12.2 ppm/℃.The PSRR was 70 d B@100 k Hz.The drive current of the reference can reach up to 10 m A.The area of the voltage reference in the SAR ADC chip is only 449614 m~2.The total power consumption is only 1.092 m W.

【Abstract】 An on-chip reference voltage has been designed in capacitor-resister hybrid SAR ADC for CZT detector with the TSMC 0.35 μm 2P4 M CMOS process.The voltage reference has a dynamic load since using variable capacitors and resistances,which need a large driving ability to deal with the current related to the time and sampling rate.Most of the previous articles about the reference for ADC present only the bandgap part for a low temperature coefficient and high PSRR.However,it is not enough and overall,it needs to consider the output driving ability.The proposed voltage reference is realized by the band-gap reference,voltage generator and output buffer.Apart from a low temperature coefficient and high PSRR,it has the features of a large driving ability and low power consumption.What is more,for CZT detectors application in space,a radiation-hardened design has been considered.The measurement results show that the output reference voltage of the buffer is 4.096 V.When the temperature varied from 0 to 80℃,the temperature coefficient is 12.2 ppm/℃.The PSRR was-70 dB@ 100 kHz.The drive current of the reference can reach up to 10 mA.The area of the voltage reference in the SAR ADC chip is only 449× 614 μm~2.The total power consumption is only 1.092 mW.

【关键词】 reference voltageSAR ADCCZT detector
【Key words】 reference voltageSAR ADCCZT detector
【基金】 supported by the National Key Scientific Instrument and Equipment Development Project(No.2011YQ040082);the National Natural Science Foundation of China(No.61376034);the Shaanxi Province Science and Technology Innovation Project(No.2015KTZDGY03-03)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2016年01期
  • 【分类号】TN792
  • 【下载频次】76
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