【摘要】 通过磷注入法合成并利用液封直拉法(LEC)生长了富铟InP单晶,将晶锭进行定向切割、研磨和抛光,得到InP抛光片。用金相显微镜、扫描电镜、快速扫描光荧光谱(PL-Mapping)技术、高分辨率XRD射线衍射技术研究了富铟非掺InP单晶样品特性。结果表明,在富铟条件下生长的InP单晶会出现富铟夹杂,这种富铟夹杂可导致其周围位错密度升高,同时富铟夹杂在晶片内分布也是不均匀的,在晶片中心部分富铟夹杂的密度高,在边缘部分密度低。对富铟夹杂形成及不均匀分布的原因进行了分析,讨论了富铟夹杂对PL-Mapping发光峰峰值的影响。更多还原

【Abstract】 In-rich InP single crystal was grown from indium-riched melt which was synthesized by in-situ injection technique. After slicing,lapping and polishing,the polished wafer was obtained. The undoped In-riched InP wafers were investigated by optical microscopy,scanning electron microscopy,rapid photoluminescence mapping( PL-Mapping) and high-resolution X-ray diffraction. The experimental results indicate that the InP ingots grown from In-rich melt might have indium inclusions. The dislocation density around the inclusions is increased,and the distribution of the indium inclusions in the wafer is not uniform. The density of the indium inclusions in the wafer center is higher. The reasons of the formation and distribution of indium inclusions are analyzed,and the impact of indium inclusions on the emission peak of PL-Mapping are discussed.更多还原