【摘要】 为了研究氧气与氩气的比例和溅射气压对Zn O薄膜的微观结构及光电特性的影响,在氧化铟锡(ITO)玻璃上采用射频感应耦合离子源增强磁控溅射方法镀上具有一定c轴择优取向的Zn O薄膜,用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针测试仪、紫外可见分光光度计表征薄膜微观结构与光电特性。结果表明随着氧分压的增加,薄膜表面的平整度先增加后减小,沿(002)方向生长的Zn O薄膜结晶度、晶粒尺寸先增加后减小,方阻先减小后增大,晶粒尺寸、方阻等值在O2和Ar的体积流量比为15∶60时达到极值。实验中改变溅射时的气压值,发现较大的溅射气压有利于磁控溅射的进行,有利于获得纯净的Zn O薄膜,在可见光范围内有的样品平均透过率超过90%。更多还原

【Abstract】 In order to study the influence of proportion of oxygen and argon as well as sputtering pressure on the microstructure and photoelectric properties of the Zn O thin films. Through the method of RF inductively coupled ion source enhanced magnetron sputtering,Zn O films with certain c axis orientation prefered were plated on the Indium Tin oxide( ITO) glass. X-ray diffraction( XRD),scanning electron nicroscope( SEM),four-point probes and UV-vis spectrophotometer were used to represent the microstructure and properties of the films. The results show that surface flatness of the thin films first increases then decreases,the crystallinity along the orientation of( 002) and grain size of Zn O thin films first increases then decreases and sheet resistance values first decrease then increase with the increase of oxygen partial pressure. The values of grain size and sheet resistance etc reach the peak at15∶ 60 volume flow ratio of O2 and Ar. Through changing the sputtering pressure,the results show that higher sputtering pressure is good for magnetron sputtering process and getting purer Zn O thin films.Some values of the average transmittance are over 90% in the range of visible light.更多还原