Two kinds of Si( 111) / NdFeCo( 610 nm) / Cr( 10 nm) thin film samples were prepared by radio frequency( RF) magnetron sputtering under working Ar pressure( pAr) of 0. 1 Pa at substrate temperature( TS) of 25 and 310 ℃,respectively. The effects of one-step and three-step rapid thermal annealing( RTA) processes( denoted as RTA-I and RTA-II,respectively) on crystal structures and magnetic properties of the films were characterized by X-ray diffraction( XRD),field emission scanning electron microscope( FESEM),...