【摘要】 使用脉冲激光沉积技术在石英衬底上制备了ZnOSe薄膜。不同温度下对ZnOSe薄膜在N2气氛中进行快速退火。采用X射线衍射、Hall测试、紫外-可见透射光谱测试及X射线光电子谱等分析测试技术对薄膜进行结构和性能表征,结果表明:ZnOSe薄膜具有良好的(002)择优取向;800℃退火后的薄膜中空穴浓度达到了1.517×1017 cm-3,实现了p型导电。更多还原

【Abstract】 The ZnOSe thin films on quartz were prepared by using pulsed laser deposition(PLD).The thin films were annealed by using rapid thermal annealing(RTA)technology at various temperatures under N2 protection.The structure and properties of the films were characterized by X-ray diffraction(XRD),Hall measurement,UV-vis transmission spectroscopy and X-ray photoelectron spectroscopy(XPS).The results indicate that the films have a(002)preferred orientation.The film annealed at 800 ℃ has a hole concentration of 1.517×1017 cm-3realizingp-type conductivity.更多还原