Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si(001) substrates

【摘要】 Semi-polar(1-101) In Ga N/Ga N light-emitting diodes were prepared on standard electronic-grade Si(100) substrates.Micro-stripes of Ga N and In Ga N/Ga N quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared(1-101) Ga N, an In Ga N/Ga N LED was fabricated. Electroluminescence over 5 m A to 60 m A is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.更多还原

【Abstract】 Semi-polar(1-101) In Ga N/Ga N light-emitting diodes were prepared on standard electronic-grade Si(100) substrates.Micro-stripes of Ga N and In Ga N/Ga N quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared(1-101) Ga N, an In Ga N/Ga N LED was fabricated. Electroluminescence over 5 m A to 60 m A is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.更多还原