节点文献
Threshold switching uniformity in In2Se3 nanowire-based phase change memory
【摘要】 The uniformity of threshold voltage and threshold current in the In2Se3nanowire-based phase change memory(PCM)devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.
【Abstract】 The uniformity of threshold voltage and threshold current in the In2Se3nanowire-based phase change memory(PCM)devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.
【关键词】 phase change memory；
nanowire；
trap-limited model；
threshold voltage；
【Key words】 phase change memory； nanowire； trap-limited model； threshold voltage；
【Key words】 phase change memory； nanowire； trap-limited model； threshold voltage；
【基金】 supported by the National Basic Research Program of China(Grant No.2011CBA00604)
- 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2015年05期
- 【分类号】TP333
- 【下载频次】28