By using the pulsed laser single event effect facility and electro-static discharge(ESD) test system, the characteristics of the high current, relation with external stimulus and relevance to impacted modes of single event latch-up(SEL)and transient-induced latch-up(TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor(CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between high current induced by SEL and that by TLU are disclo...
【英文摘要】
By using the pulsed laser single event effect facility and electro-static discharge(ESD) test system, the characteristics of the high current, relation with external stimulus and relevance to impacted modes of single event latch-up(SEL)and transient-induced latch-up(TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor(CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between high current induced by SEL and that by TLU are disclo...
【基金】
Project supported by the National Natural Science Foundation of China(Grant No.41304148)
【更新日期】
2015-04-07
【分类号】
O441.1
【正文快照】
a)National Space Science Center,Chinese Academy of Sciences,Beijing 100190,Chinab)University of Chinese Academy of Sciences,Beijing 100049,ChinaBy using the pulsed laser single event effect facility and electro-static discharge(ESD)test system,the charact
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