The photoluminescence(PL) properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots(QDs) and an InGaN matrix in the InGaN epilayer are investigated.The excitation power dependences of QD-related green emissions(P_D>) and matrix-related blue emissions(P_M) in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both P_m and P_D are dominated by the combined action of Coulomb screening and l...
【英文摘要】
The photoluminescence(PL) properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots(QDs) and an InGaN matrix in the InGaN epilayer are investigated.The excitation power dependences of QD-related green emissions(P_D>) and matrix-related blue emissions(P_M) in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both P_m and P_D are dominated by the combined action of Coulomb screening and l...
【基金】
supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120131110006);
the Key Science and Technology Program of Shandong Province,China(Grant No.2013GGX10221);
the Key Laboratory of Functional Crystal Materials and Device(Shandong University,Ministry of Education)(Grant No.JG1401);
the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112);
the National Natural Science Foundation of China(Grant No.61306113)
【更新日期】
2015-04-08
【分类号】
O471.1
【正文快照】
1.Introduction sion mechanism related to both the InGaN matrix and the QDst广
| 
推荐 
点击下列相关研究机构和相关文献作者，可以直接查到这些机构和作者被《中国知识资源总库》收录的其它文献，使您全面了解该机构和该作者的研究动态和历史。
