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溶胶-凝胶法制备钡钕钛薄膜及其介电性能研究

Preparation and Dielectric Properties of Ba₄Nd_9.33Ti₁₈O₅₄ Dielectric Thin Films Processed by Sol-Gel Technique

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【Author】 ZHU Weixin;XU Shaojun;ZHANG Yao;YANG Chengtao;YANG Yixi;ZHOU Dong;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China;Geological Exploration & Development Research Institute of CNPC Chuanqing Drilling Engineering Company Limited;

【机构】电子科技大学电子薄膜与集成器件国家重点实验室；川庆钻探工程有限公司地质勘探开发研究院；

【摘要】采用溶胶-凝胶法在Si(111)和Pt/Ti/SiO2/Si衬底上制备Ba4Nd9.33Ti18O54(BNT)介质薄膜,采用X线衍射仪(XRD)和扫描电子显微镜(SEM)研究了不同退火温度对薄膜结构和表面形貌的影响。结果表明当薄膜在950℃下退火2h后具有较好结晶质量的钨青铜结构,所得到的薄膜表面较为疏松;通过掺入质量分数为2%B2O3-2SiO2,可进一步将BNT薄膜的晶化温度降至900℃,且结构致密。介电性能测试表明,1 MHz频率下BNST薄膜的介电常数为45,介电损耗为1.1%,30V偏压下漏电流密度为4.13×10-6 A/cm2。更多还原

【Abstract】 Ba4Nd9.33Ti18O54(BNT)thin films were obtained on Si and Pt/Ti/SiO2/Si substrates by Sol-Gel technique.The effects of annealing temperature on crystallinity and morphological characteristic were investigated by Xray diffraction(XRD)and scanning electron microscope(SEM).The results showed that a porous and well crystallized thin film with a tungsten bronze structure was obtained by annealing these films at 950℃for 2h.After doped with 2% B2O3-2SiO2,the crystallization temperature was reduce to 900 ℃.The dielectric characteristics measurement showed that the dielectric constant and the dielectric loss of the BNT thin films were 45 and 1.1% at 1 MHz frequency,the leakage current density was 4.13×10-6 A/cm2 at bias of 30 V.更多还原