【摘要】 采用反应直流磁控溅射法在镍锌铁氧体基片上制备的TaN薄膜电阻器,由于镍锌铁氧体基片表面平整性差,散热性能低,制得的电阻器功率为1 W。通过制作CaO-Al2O3-SiO2(CAS)玻璃釉,以丝网印刷的方式对基片表面进行处理,再经过850℃烧结处理,得到具有一定表面平整性的基片。基于处理后的铁氧体基片制作的TaN薄膜功率电阻器的功率显著提高,从1 W提升到了2.5 W。更多还原

【Abstract】 TaN thin film resistors were prepared on Ni-Zn ferrite substrate by the reactive DC magnetron sputtering method.Since the Ni-Zn ferrite substrate had poor surface flatness and low heat dissipation,the power of the resistor was just 1W.CaO-Al2O3-SiO2(CAS)glass glaze was made to treat the surface of the substrate by the manner of screen printing,and then the substrate were sintered at 850 ℃,thus the substrate with a smooth surface was made.Finally,the power of resistors made on the treated substrates was greatly increased from 1 Wto 2.5 W.更多还原