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CdS/CdS和CdS/Dy/CdS薄膜结构及其XPS分析

Structure and XPS Analysis of CdS / CdS and CdS / Dy / CdS Thin Films

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【作者】 邹凯李蓉萍

【Author】 ZOU Kai;LI Rong-ping;School of Physical Science and Technology,Inner Mongolia University;Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region;

【机构】 内蒙古大学物理科学与技术学院内蒙古自治区高等学校半导体光伏技术重点实验室

【摘要】 采用化学水浴法制备了结构为CdS/CdS的薄膜,并结合电子束真空蒸发法,在两层CdS之间沉积一层Dy单质制备了结构为CdS/Dy/CdS的Dy掺杂薄膜。XRD和SEM测试表明,未掺杂的薄膜为沿(111)晶面择优生长的立方相闪锌矿结构,但是含有Dy掺杂层的CdS薄膜则为立方相和六方相的混合结构,并且掺Dy后CdS的晶粒尺寸和晶格常数变大。XPS分析表明,两种样品均富Cd,掺Dy有助于降低薄膜中O和C的含量,进而抑制薄膜中氧化物的形成;未掺杂时薄膜表面和内部Cd、S的原子比分别为1∶0.63和1∶0.71,掺Dy后分别提高到1∶0.81和1∶0.83,更接近CdS的化学计量比,而且组分更加均匀。

【Abstract】 Pure CdS thin film with the structure of CdS / CdS was prepared by means of chemical bath deposition.Rare earth Dy doped film with the structure of CdS / Dy / CdS was also prepared by connecting with the electron beam evaporation method.XRD andSEM tests show that the crystallographic structure of un-doped film is found to be cubic with a preferential orientation along the(111) plane.But CdS film is a mixed structure of cubic and hexagonal phase after the deposition of Dy layer,and Dy-doping increases the grain size and lattice constant of CdS.XPS analysis indicates that the two samples are all rich in Cd.Doping with Dy helps to reduce the concentration of O and C in the films,and then inhibits the formation of oxide.The inside and surface proportion of Cd,S atoms in un-doped film are 1 0.63 and 1 0.71,respectively.While they are10.81 and 10.83 in CdS / Dy / CdS sample,respectively.So the deposition of Dy layer between the two CdS layers promotes the combination of Cd andS,and leads to a uniform chemical composition.

【基金】 内蒙古自治区教育厅项目(NJ09006)
  • 【分类号】O484
  • 【被引频次】4
  • 【下载频次】403
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