基于电阻负反馈结构,结合理论推导,利用SMIC 0.18μm RFCMOS工艺,设计了一种1~3 GHz的无电感型宽带低噪声放大器。仿真结果表明,宽带低噪声放大器在频带为1~3 GHz时,S11<-15 d B,增益>14 d B,并在整个频带范围内的平坦度较好,增益波动<2.6 d B,噪声系数<3.6 d B。
【英文摘要】
Based on resistive negative feedback structure,a 1 ~ 3 GHz non-inductive wideband low noise amplifier is presented in the paper. Combined with theoretical analysis,the circuit is designed in SMIC 0. 18 μm RF CMOS process. The simulation results show that the wideband low noise amplifier achieves-15 d B matching around the operating frequency,its conversion gain is over 14 d B with2. 6 d B ripple,and the noise figure is less than 3. 6 d B.
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