The excellent surface passivation scheme for suppression of surface recombination is a basic prerequisite to obtain high efficiency solar cells. Particularly, the HIT(heterojunction with intrinsic thin-layer) solar cell, which possesses an abrupt discontinuity of the crystal network at an interface between the crystalline silicon(c-Si) surface and the hydrogenated amorphous silicon(a-Si:H) thin film, usually causes a large density of defects in the bandgap due to a high density of dangling bonds, so it is v...
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