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Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

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【作者】 孙顶葛阳许盛之张力李宝璋王广才魏长春赵颖张晓丹

【Author】 SUN Ding;GE Yang;XU Sheng-Zhi;ZHANG Li;LI Bao-Zhang;WANG Guang-Cai;WEI Chang-Chun;ZHAO Ying;ZHANG Xiao-Dan;Institute of Photo Electronics Thin Film Devices and Technology,and Key Laboratory of Photoelectronic Thin Film Devices and Technology,Nankai University;

【机构】 Institute of Photo Electronics Thin Film Devices and Technology,and Key Laboratory of Photoelectronic Thin Film Devices and Technology,Nankai University

【摘要】 The objective of this study is to find an effective method to improve VOC without JSC Joss for Cu2ZnSnSe4(CZTSe) thin film solar cells,which have been fabricated by the one step co-evaporation technique.Surface sulfurization of CZTSe thin Elms is carried out by using one technique that does not utilize toxic H2S gas;a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor.A Cu2ZnSn(S,Se)4(CZTSSe) thin layer is grown on the surface of the CZTSe thin film after the annealing.The conversion efficiency of the completed device is improved due to the enhancement of VOC,which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

【Abstract】 The objective of this study is to find an effective method to improve VOC without JSC Joss for Cu2ZnSnSe4(CZTSe) thin film solar cells,which have been fabricated by the one step co-evaporation technique.Surface sulfurization of CZTSe thin Elms is carried out by using one technique that does not utilize toxic H2S gas;a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor.A Cu2ZnSn(S,Se)4(CZTSSe) thin layer is grown on the surface of the CZTSe thin film after the annealing.The conversion efficiency of the completed device is improved due to the enhancement of VOC,which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

【基金】 Supported by the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120031110039
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年12期
  • 【分类号】TM914.42
  • 【下载频次】27
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