节点文献

Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【作者】闫俊达；王权；王晓亮；肖红领；姜丽娟；殷海波；冯春；王翠梅；渠慎奇；巩稼民；张博；李百泉；王占国；侯洵；

【Author】 YAN Jun-Da;WANG Quan;WANG Xiao-Liang;XIAO Hong-Ling;JIANG Li-Juan;YIN Hai-Bo;FENG Chun;WANG Cui-Mei;QU Shen-Qi;GONG Jia-Min;ZHANG Bo;LI Bai-Quan;WANG Zhan-Guo;HOU Xun;Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;School of Electronic Engineering,Xi’an University of Posts and Telecommunications;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics;Beijing Huajin Chuangwei Technology Co.,Ltd.;

【机构】 Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences； School of Electronic Engineering,Xi’an University of Posts and Telecommunications； Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices； ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics； Beijing Huajin Chuangwei Technology Co.,Ltd.；

【摘要】 Direct-current transfer characteristics of（In GaN）/AlGaN/AlN/GaN hetcrojunction field effect transistors（HFETs）are presented.A drain current plateau（Ids = 32.0 mA/mm） for Vgs swept from +0.7 V to-0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs.The theoretical calculation shows the coexistence of two-dimensional electron gas（2DEG） and two-dimensional hole gas（2DHG） in InGaN/AlGaN/AlN/GaN heterostructures,and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau.Moreover,the current piateau shows the time-dependent behavior when I_DS-V_GS scans repeated are conducted.The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.更多还原

【Abstract】 Direct-current transfer characteristics of（In GaN）/AlGaN/AlN/GaN hetcrojunction field effect transistors（HFETs）are presented.A drain current plateau（Ids = 32.0 mA/mm） for Vgs swept from +0.7 V to-0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs.The theoretical calculation shows the coexistence of two-dimensional electron gas（2DEG） and two-dimensional hole gas（2DHG） in InGaN/AlGaN/AlN/GaN heterostructures,and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau.Moreover,the current piateau shows the time-dependent behavior when I_DS-V_GS scans repeated are conducted.The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.更多还原

【基金】 Supported by the Knowledge Innovation Project of the Chinese Academy of Sciences;the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002;the National Basic Research Program of China;the National Science and Technology Major Project of China

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年12期

【分类号】TN386
【下载频次】30

知网节下载

节点文献中：

本文链接的文献网络图示:

本文的引文网络

节点文献