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Fabrication of Through Micro-hole Arrays in Silicon Using Femtosecond Laser Irradiation and Selective Chemical Etching

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【作者】 高博陈涛陈颖司金海侯洵

【Author】 GAO Bo;CHEN Tao;CHEN Ying;SI Jin-Hai;HOU Xun;Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique,School of Electronics & information Engineering,Xi’an Jiaotong University;

【机构】 Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique,School of Electronics & information Engineering,Xi’an Jiaotong University

【摘要】 We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching.The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution.The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy.The effects of the pulse number on the depth and diameter of the holes are investigated.Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated.

【Abstract】 We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching.The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution.The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy.The effects of the pulse number on the depth and diameter of the holes are investigated.Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated.

【基金】 Supported by the National Basic Research Program of China under Grant No 2012CB921804;the National Natural Science Foundation of China under Grant Nos 11204236 and 61308006;the Collaborative Innovation Center of Suzhou Nano Science and Technology
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年10期
  • 【分类号】O437
  • 【下载频次】44
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