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Contact-Size-Dependent Cutoff Frequency of Bottom-Contact Organic Thin Film Transistors

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【作者】 孙静王宏王湛吴士伟马晓华

【Author】 SUN Jing;WANG Hong;WANG Zhan;WU Shi-Wei;MA Xiao-Hua;School of Advanced Materials and Nanotechnology,Key Laboratory of Wide Band-Gap Semiconductor Technology,Xidian University;

【机构】 School of Advanced Materials and Nanotechnology,Key Laboratory of Wide Band-Gap Semiconductor Technology,Xidian University

【摘要】 The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thickness,field-effect mobility,channel length and gate-source voltage on the contact length(source and drain electrodes’ length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model.It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm.With the help of the contact length related contact resistance,contact-size-dependent f_T of bottom-contact OTFTs is studied and it is found that f_T increases with the decrease of the contact length in bottom-contact OTFTs.

【Abstract】 The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thickness,field-effect mobility,channel length and gate-source voltage on the contact length(source and drain electrodes’ length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model.It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm.With the help of the contact length related contact resistance,contact-size-dependent f_T of bottom-contact OTFTs is studied and it is found that f_T increases with the decrease of the contact length in bottom-contact OTFTs.

【基金】 Supported by the State Key Fundamental Research Project of China under Grant No 2011CBA00606;the National Natural Science Foundation of China under Grant Nos 51503167 and 61574107
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2015年10期
  • 【分类号】TN321.5
  • 【下载频次】13
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