Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors

【摘要】 Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method.The transistor performance depends on the gate dielectric layer.A high performance polymer transistor is achieved,with the saturated electron mobility of about 0.46 cm~2/Vs,threshold voltage nearly OV and subthreshold sway of about 0.9V/decade,employing a polystyrene(PS) dielectric layer.The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric,comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small V_T,a large μ and a poly(methyl methacrylate)(PMMA)dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance,processed from the orthogonal solvents.更多还原

【Abstract】 Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method.The transistor performance depends on the gate dielectric layer.A high performance polymer transistor is achieved,with the saturated electron mobility of about 0.46 cm~2/Vs,threshold voltage nearly OV and subthreshold sway of about 0.9V/decade,employing a polystyrene(PS) dielectric layer.The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric,comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small V_T,a large μ and a poly(methyl methacrylate)(PMMA)dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance,processed from the orthogonal solvents.更多还原